Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filtering

Room temperature spin filtering effect in GaNAs: Role of hydrogen

The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature.

The Hanle effect in InAs/GaAs quantum dots (QDs) is studied under optical orientation as a function of temperature over the range of 150-300 K, with the aim of understanding the physical mechanism responsible for the observed sharp increase of electron spin polarization with increasing temperature. The deduced spin lifetime T(s) of positive trions in the QDs is found to be independent of temper...

Electron spin coherence near room temperature in magnetic quantum dots

We report on an example of confined magnetic ions with long spin coherence near room temperature. This was achieved by confining single Mn(2+) spins in colloidal semiconductor quantum dots (QDs) and by dispersing the QDs in a proton-spin free matrix. The controlled suppression of Mn-Mn interactions and minimization of Mn-nuclear spin dipolar interactions result in unprecedentedly long phase mem...

Room-Temperature Spin Memory in Two-Dimensional Electron Gases

Time-resolved Kerr reflectivity of two-dimensional electron gases in II-VI semiconductors provides a direct measure of electron spin precession and relaxation over a temperature range from 4 to 300 kelvin. The introduction of n-type dopants increases the electronic spin lifetimes several orders of magnitude relative to insulating counterparts, a trend that is also observed in doped bulk semicon...

Inverted spin polarization of Heusler alloys for new spintronic devices

A new magnetic logic overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive and negative TMR values at different bias voltages at room temperature which generally adds an additional degree of freedom to all spintronic devices. Electr...